UCL’s Resistive RAM (RRAM) featured in Research Media’s publication
Research on the next generation of memory devices based at UCL’s Department of Electrical and Electronic Engineering, has led to the development of the UCL RRAM concept that researchers consider a possible replacement of flash memory.
The UCL RRAM concept has been developed by Dr Tony Kenyon and Dr Adnan Mehonic, who believe that the silicon-based UCL RRAM approach will be part of the next generation of computer memory technologies.
The team’s focus is now on receiving the latest generation of UCL RRAM memory arrays, currently being fabricated at SEMATECH’s state of the art fabrication facilities. The delivery of these devices will allow the team to cross a major milestone on the route towards commercialisation of their research. The devices under fabrication will provide further data on compatibility with standard semiconductor fabrication practice, yield, reproducibility and switching regimes.
The fabrication of the RRAM memory arrays was facilitated and supported by UCLB through Proof of Concept funding. UCLB has also filed patents covering this technology, as well as setting up a commercialisation strategy and engaging with the semiconductor industry.
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